[{"run_id":"20261014T203208-0851c9a1","observed_at":"2026-10-14 17:50:09.728220+00:00","course_uid":"course_16ec62e27a725e15f6c766b5","course_id":"MS&E 333","catalog_version_id":"e94b21899b0605d18fecb758ad3d366b79ca573a832b4e0a87bf7769b1f8f20a","record_version_id":"a41a9074ce213ecb72198ec6f40b7c5e48a4a02a2d31e7a78482c7d76df7999a","job_id":"enrich-49752a259f17fab0f49665b3","output_id":"030871a3caa87a8f89e245bb860e7b26b8cdcc64438b19064e5d57f54e0d17f8","section":"requirements","status":"needs_review","value_json":"{\"nodes\":[{\"children\":[\"n1\",\"n2\",\"n3\",\"n4\"],\"condition\":null,\"course\":null,\"evidence\":\"M S & E 350,351, orCBE 440, or member of Engineering Guest Students\",\"id\":\"root\",\"kind\":\"any\"},{\"children\":[],\"condition\":null,\"course\":{\"course_number\":350,\"minimum_grade\":null,\"subjects\":[\"MS&E\"],\"timing\":\"unspecified\"},\"evidence\":\"M S & E 350\",\"id\":\"n1\",\"kind\":\"course\"},{\"children\":[],\"condition\":null,\"course\":{\"course_number\":351,\"minimum_grade\":null,\"subjects\":[\"MS&E\"],\"timing\":\"unspecified\"},\"evidence\":\"M S & E 350,351\",\"id\":\"n2\",\"kind\":\"course\"},{\"children\":[],\"condition\":null,\"course\":{\"course_number\":440,\"minimum_grade\":null,\"subjects\":[\"CBE\"],\"timing\":\"unspecified\"},\"evidence\":\"orCBE 440\",\"id\":\"n3\",\"kind\":\"course\"},{\"children\":[],\"condition\":\"member of Engineering Guest Students\",\"course\":null,\"evidence\":\"member of Engineering Guest Students\",\"id\":\"n4\",\"kind\":\"condition\"}],\"notes\":[\"Interpreted 'orCBE' as the OR operator followed by CBE 440.\",\"The guest-student clause is an alternative eligibility condition, not a course requirement.\"],\"root\":\"root\",\"status\":\"parsed\"}","candidate_json":null,"error":null,"model":"Qwen/Qwen3.8-27B","model_revision":"1d4bf0f2ff6012fd82039f2fa52739d0dd7c60c0","selected_for_release":false},{"run_id":"20261014T203208-0851c9a1","observed_at":"2026-10-14 17:50:09.728220+00:00","course_uid":"course_16ec62e27a725e15f6c766b5","course_id":"MS&E 333","catalog_version_id":"e94b21899b0605d18fecb758ad3d366b79ca573a832b4e0a87bf7769b1f8f20a","record_version_id":"a41a9074ce213ecb72198ec6f40b7c5e48a4a02a2d31e7a78482c7d76df7999a","job_id":"enrich-49752a259f17fab0f49665b3","output_id":"030871a3caa87a8f89e245bb860e7b26b8cdcc64438b19064e5d57f54e0d17f8","section":"search_profile","status":"valid","value_json":"{\"activity_tags\":[],\"assumed_background\":[],\"search_phrases\":[\"materials processing at the microscopic level\",\"semiconductor device physics and design\",\"lithography techniques comparison\",\"process flow design for semiconductors\"],\"skills_taught\":[{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"official_learning_outcomes\",\"outcome_index\":0,\"quote\":\"Explain basic semiconductor physics, and apply these same physics to approximate device carrier densities, mobility, switching behavior, and other electronically related quantities\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Explain basic semiconductor physics and apply it to approximate device carrier densities, mobility, and switching behavior.\"},{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"official_learning_outcomes\",\"outcome_index\":1,\"quote\":\"Design process flows based on the physical processes required for desired outcomes in target semiconductor device structures\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Design process flows based on physical processes required for desired outcomes in target semiconductor device structures.\"},{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"official_learning_outcomes\",\"outcome_index\":2,\"quote\":\"Describe how lithography processes are executed and be able to weigh the benefits of each lithography technique against each other\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Describe how lithography processes are executed and weigh the benefits of different lithography techniques against each other.\"},{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"official_learning_outcomes\",\"outcome_index\":3,\"quote\":\"Analyze device characteristics and connect this analysis with designed process flows\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Analyze device characteristics and connect this analysis with designed process flows.\"}],\"summary\":{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"title\",\"quote\":\"MICROPROCESSING OF MATERIALS\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"},{\"course_id\":\"MS&E 333\",\"field\":\"description\",\"quote\":\"Integration of materials science theory and materials engineering practice as applied to the processing of materials at the microscopic level.\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Microprocessing of Materials integrates materials science theory and engineering practice to process materials at the microscopic level.\"},\"topics\":[{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"description\",\"quote\":\"Integration of materials science theory and materials engineering practice as applied to the processing of materials at the microscopic level.\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Materials science theory and engineering practice applied to microscopic material processing.\"},{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"official_learning_outcomes\",\"outcome_index\":0,\"quote\":\"Explain basic semiconductor physics, and apply these same physics to approximate device carrier densities, mobility, switching behavior, and other electronically related quantities\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Basic semiconductor physics including carrier densities, mobility, and switching behavior.\"},{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"official_learning_outcomes\",\"outcome_index\":2,\"quote\":\"Describe how lithography processes are executed and be able to weigh the benefits of each lithography technique against each other\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Execution of lithography processes and comparative benefits of different lithography techniques.\"}]}","candidate_json":null,"error":null,"model":"Qwen/Qwen3.8-27B","model_revision":"1d4bf0f2ff6012fd82039f2fa52739d0dd7c60c0","selected_for_release":false},{"run_id":"20261014T203208-0851c9a1","observed_at":"2026-10-14 17:50:09.728220+00:00","course_uid":"course_16ec62e27a725e15f6c766b5","course_id":"MS&E 333","catalog_version_id":"e94b21899b0605d18fecb758ad3d366b79ca573a832b4e0a87bf7769b1f8f20a","record_version_id":"a41a9074ce213ecb72198ec6f40b7c5e48a4a02a2d31e7a78482c7d76df7999a","job_id":"enrich-49752a259f17fab0f49665b3","output_id":"030871a3caa87a8f89e245bb860e7b26b8cdcc64438b19064e5d57f54e0d17f8","section":"student_experience","status":"insufficient_evidence","value_json":"{\"status\":\"insufficient_evidence\",\"themes\":[]}","candidate_json":null,"error":null,"model":"Qwen/Qwen3.8-27B","model_revision":"1d4bf0f2ff6012fd82039f2fa52739d0dd7c60c0","selected_for_release":false},{"run_id":"20261014T203208-0851c9a1","observed_at":"2026-10-14 17:50:09.728220+00:00","course_uid":"course_16ec62e27a725e15f6c766b5","course_id":"MS&E 333","catalog_version_id":"e94b21899b0605d18fecb758ad3d366b79ca573a832b4e0a87bf7769b1f8f20a","record_version_id":"a41a9074ce213ecb72198ec6f40b7c5e48a4a02a2d31e7a78482c7d76df7999a","job_id":"enrich-49752a259f17fab0f49665b3","output_id":"030871a3caa87a8f89e245bb860e7b26b8cdcc64438b19064e5d57f54e0d17f8","section":"student_summary","status":"valid","value_json":"{\"context_hash\":\"f220c9a8dc008074f39685031dca9a37fdabe92fb0ec72857daf5e7fbaaccdf3\",\"course_id\":\"MS&E 333\",\"current_instructors\":[{\"instructor_uid\":\"instructor_beefa65273d8d0c7df2510b4\",\"message\":\"No course-specific reviews available\",\"name\":\"Daniel Rhodes\",\"review_status\":\"no_course_reviews\",\"rmp_instructor_id\":\"rmp:2827834\",\"summary\":[{\"citations\":[{\"course_id\":\"MS&E 333\",\"run_id\":\"20261014T203208-0851c9a1\",\"section_number\":1,\"source_course_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"section_grades_latest\",\"term_id\":\"1244\",\"type\":\"grade\"},{\"course_id\":\"MS&E 333\",\"run_id\":\"20261014T203208-0851c9a1\",\"section_number\":1,\"source_course_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"section_grades_latest\",\"term_id\":\"1254\",\"type\":\"grade\"},{\"course_id\":\"MS&E 333\",\"run_id\":\"20261014T203208-0851c9a1\",\"section_number\":1,\"source_course_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"section_grades_latest\",\"term_id\":\"1264\",\"type\":\"grade\"}],\"text\":\"Recent recorded grades — Spring 2024: 3.06 GPA, 41.7% A/AB (n=24 letter grades); Spring 2025: 3.18 GPA, 42.9% A/AB (n=28 letter grades); Spring 2026: 3.25 GPA, 50.0% A/AB (n=16 letter grades).\"}]}],\"difficulty_workload\":[],\"errors\":[],\"historical_context\":[],\"message\":\"No course-specific reviews available\",\"offered\":true,\"profile_hash\":\"3f5110430805ccdd533c0c072df62d68a8a5f5441c4530bbdb15d419a199a09c\",\"quick_take\":[{\"citations\":[{\"course_id\":\"MS&E 333\",\"run_id\":\"20261014T203208-0851c9a1\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"grades_latest\",\"term_id\":\"1244\",\"type\":\"grade\"},{\"course_id\":\"MS&E 333\",\"run_id\":\"20261014T203208-0851c9a1\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"grades_latest\",\"term_id\":\"1254\",\"type\":\"grade\"},{\"course_id\":\"MS&E 333\",\"run_id\":\"20261014T203208-0851c9a1\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"grades_latest\",\"term_id\":\"1264\",\"type\":\"grade\"}],\"text\":\"Recent recorded grades — Spring 2024: 3.06 GPA, 41.7% A/AB (n=24 letter grades); Spring 2025: 3.18 GPA, 42.9% A/AB (n=28 letter grades); Spring 2026: 3.25 GPA, 50.0% A/AB (n=16 letter grades).\"}],\"student_experience\":[],\"task_hash\":\"9dea82ef7f2113a5605c1c6030c4f9b19967eb742cc93a78268fb92357d29f5c\",\"teaching_history\":[{\"citations\":[{\"course_id\":\"MS&E 333\",\"run_id\":\"20261014T203208-0851c9a1\",\"section_number\":1,\"source_course_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"section_grades_latest\",\"term_id\":\"1204\",\"type\":\"grade\"},{\"course_id\":\"MS&E 333\",\"run_id\":\"20261014T203208-0851c9a1\",\"section_number\":1,\"source_course_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"section_grades_latest\",\"term_id\":\"1224\",\"type\":\"grade\"},{\"course_id\":\"MS&E 333\",\"run_id\":\"20261014T203208-0851c9a1\",\"section_number\":1,\"source_course_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"section_grades_latest\",\"term_id\":\"1234\",\"type\":\"grade\"},{\"course_id\":\"MS&E 333\",\"run_id\":\"20261014T203208-0851c9a1\",\"section_number\":1,\"source_course_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"section_grades_latest\",\"term_id\":\"1244\",\"type\":\"grade\"},{\"course_id\":\"MS&E 333\",\"run_id\":\"20261014T203208-0851c9a1\",\"section_number\":1,\"source_course_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"section_grades_latest\",\"term_id\":\"1254\",\"type\":\"grade\"},{\"course_id\":\"MS&E 333\",\"run_id\":\"20261014T203208-0851c9a1\",\"section_number\":1,\"source_course_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"section_grades_latest\",\"term_id\":\"1264\",\"type\":\"grade\"}],\"text\":\"DANIEL RHODES is recorded teaching in Spring 2020, Spring 2022, Spring 2023, Spring 2024, Spring 2025, Spring 2026. Recorded history may be incomplete and does not establish a future schedule.\"}],\"term_id\":\"1274\",\"term_name\":\"2027 Sprng\",\"version\":3}","candidate_json":null,"error":null,"model":"Qwen/Qwen3.8-27B","model_revision":"1d4bf0f2ff6012fd82039f2fa52739d0dd7c60c0","selected_for_release":false},{"run_id":"20260906T231458-5fdd2fff","observed_at":"2026-09-06 23:14:58.172943+00:00","course_uid":"course_16ec62e27a725e15f6c766b5","course_id":"MS&E 333","catalog_version_id":"e58866f4b3972c306261950d7ba668f3ae073e28742d7ed9c688b3d38b1d1ee4","record_version_id":"06497211b10ace5a2498ab996fe05446877db0fddc56c667c445ae30078af66f","job_id":"enrich-5291a20b802b9bbbe22b24cb","output_id":"8ecccebccb9fc04aabef8257ae54fc9c432adbf9cf3e068b341773e7c592c0f9","section":"requirements","status":"valid","value_json":"{\"nodes\":[{\"children\":[\"n1\",\"n2\",\"n3\",\"n4\"],\"condition\":null,\"course\":null,\"evidence\":\"M S & E 350,351, orCBE 440, or member of Engineering Guest Students\",\"id\":\"n0\",\"kind\":\"any\"},{\"children\":[],\"condition\":null,\"course\":{\"course_number\":350,\"minimum_grade\":null,\"subjects\":[\"MS&E\"],\"timing\":\"prior\"},\"evidence\":\"M S & E 350\",\"id\":\"n1\",\"kind\":\"course\"},{\"children\":[],\"condition\":null,\"course\":{\"course_number\":351,\"minimum_grade\":null,\"subjects\":[\"MS&E\"],\"timing\":\"prior\"},\"evidence\":\"351\",\"id\":\"n2\",\"kind\":\"course\"},{\"children\":[],\"condition\":null,\"course\":{\"course_number\":440,\"minimum_grade\":null,\"subjects\":[\"CBE\"],\"timing\":\"prior\"},\"evidence\":\"CBE 440\",\"id\":\"n3\",\"kind\":\"course\"},{\"children\":[],\"condition\":\"member of Engineering Guest Students\",\"course\":null,\"evidence\":\"member of Engineering Guest Students\",\"id\":\"n4\",\"kind\":\"condition\"}],\"notes\":[],\"root\":\"n0\",\"status\":\"parsed\"}","candidate_json":null,"error":null,"model":"nvidia/Qwen3.6-35B-A3B-NVFP4","model_revision":"1355db6a052410cfd62085d94b58866fd0f2c3c5","selected_for_release":false},{"run_id":"20260906T231458-5fdd2fff","observed_at":"2026-09-06 23:14:58.172943+00:00","course_uid":"course_16ec62e27a725e15f6c766b5","course_id":"MS&E 333","catalog_version_id":"e58866f4b3972c306261950d7ba668f3ae073e28742d7ed9c688b3d38b1d1ee4","record_version_id":"06497211b10ace5a2498ab996fe05446877db0fddc56c667c445ae30078af66f","job_id":"enrich-5291a20b802b9bbbe22b24cb","output_id":"8ecccebccb9fc04aabef8257ae54fc9c432adbf9cf3e068b341773e7c592c0f9","section":"search_profile","status":"valid","value_json":"{\"assumed_background\":[{\"evidence\":[{\"course_id\":\"MS&E 350\",\"field\":\"description\",\"quote\":\"The basic structures and resulting properties of solid materials, including phase equilibria, meta-stability, mechanical properties, failure, corrosion, and materials selection.\"},{\"course_id\":\"MS&E 351\",\"field\":\"description\",\"quote\":\"Introduction to: atomic, electronic, and defect structures in materials; diffusional, mechanical and electrical properties of materials; and the role of structure and defects in diffusional, mechanical, and electrical properties.\"},{\"course_id\":\"CBE 440\",\"field\":\"description\",\"quote\":\"Structure and properties of metallic and nonmetallic materials of construction; interrelations between chemical bonding, structure, and behavior of materials.\"}],\"text\":\"Foundational materials science covering structure, properties, and bonding of solids.\"}],\"search_phrases\":[\"materials microprocessing\",\"materials engineering practice\",\"microscopic level processing\",\"MS&E 333 prerequisites\"],\"skills_taught\":[{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"description\",\"quote\":\"Integration of materials science theory and materials engineering practice as applied to the processing of materials at the microscopic level.\"}],\"text\":\"Integration of materials science theory and engineering practice for microscopic processing.\"}],\"summary\":{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"title\",\"quote\":\"MICROPROCESSING OF MATERIALS\"},{\"course_id\":\"MS&E 333\",\"field\":\"description\",\"quote\":\"Integration of materials science theory and materials engineering practice as applied to the processing of materials at the microscopic level.\"}],\"text\":\"MS&E 333 teaches the integration of materials science theory and engineering practice for processing materials at the microscopic level.\"},\"topics\":[{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"description\",\"quote\":\"processing of materials at the microscopic level\"}],\"text\":\"Microscopic materials processing\"},{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"description\",\"quote\":\"materials science theory and materials engineering practice\"}],\"text\":\"Materials science theory and engineering practice\"}]}","candidate_json":null,"error":null,"model":"nvidia/Qwen3.6-35B-A3B-NVFP4","model_revision":"1355db6a052410cfd62085d94b58866fd0f2c3c5","selected_for_release":false},{"run_id":"20260906T231458-5fdd2fff","observed_at":"2026-09-06 23:14:58.172943+00:00","course_uid":"course_16ec62e27a725e15f6c766b5","course_id":"MS&E 333","catalog_version_id":"e58866f4b3972c306261950d7ba668f3ae073e28742d7ed9c688b3d38b1d1ee4","record_version_id":"06497211b10ace5a2498ab996fe05446877db0fddc56c667c445ae30078af66f","job_id":"enrich-5291a20b802b9bbbe22b24cb","output_id":"8ecccebccb9fc04aabef8257ae54fc9c432adbf9cf3e068b341773e7c592c0f9","section":"student_experience","status":"insufficient_evidence","value_json":"{\"status\":\"insufficient_evidence\",\"themes\":[]}","candidate_json":null,"error":null,"model":"nvidia/Qwen3.6-35B-A3B-NVFP4","model_revision":"1355db6a052410cfd62085d94b58866fd0f2c3c5","selected_for_release":false},{"run_id":"20260907T155543-ce3781c4","observed_at":"2026-09-07 15:55:43.033547+00:00","course_uid":"course_16ec62e27a725e15f6c766b5","course_id":"MS&E 333","catalog_version_id":"e58866f4b3972c306261950d7ba668f3ae073e28742d7ed9c688b3d38b1d1ee4","record_version_id":"06497211b10ace5a2498ab996fe05446877db0fddc56c667c445ae30078af66f","job_id":"enrich-5590a4969e0a630fe46a86e8","output_id":"02fd4052ac0214698b3c8d6a0576c51646d9f88f5e930983bebc1ca43babf68a","section":"requirements","status":"valid","value_json":"{\"nodes\":[{\"children\":[\"n1\",\"n2\",\"n3\",\"n4\"],\"condition\":null,\"course\":null,\"evidence\":\"M S & E 350,351, orCBE 440, or member of Engineering Guest Students\",\"id\":\"n0\",\"kind\":\"any\"},{\"children\":[],\"condition\":null,\"course\":{\"course_number\":350,\"minimum_grade\":null,\"subjects\":[\"MS&E\"],\"timing\":\"prior\"},\"evidence\":\"M S & E 350\",\"id\":\"n1\",\"kind\":\"course\"},{\"children\":[],\"condition\":null,\"course\":{\"course_number\":351,\"minimum_grade\":null,\"subjects\":[\"MS&E\"],\"timing\":\"prior\"},\"evidence\":\"351\",\"id\":\"n2\",\"kind\":\"course\"},{\"children\":[],\"condition\":null,\"course\":{\"course_number\":440,\"minimum_grade\":null,\"subjects\":[\"CBE\"],\"timing\":\"prior\"},\"evidence\":\"CBE 440\",\"id\":\"n3\",\"kind\":\"course\"},{\"children\":[],\"condition\":\"member of Engineering Guest Students\",\"course\":null,\"evidence\":\"member of Engineering Guest Students\",\"id\":\"n4\",\"kind\":\"condition\"}],\"notes\":[],\"root\":\"n0\",\"status\":\"parsed\"}","candidate_json":null,"error":null,"model":"nvidia/Qwen3.6-35B-A3B-NVFP4","model_revision":"1355db6a052410cfd62085d94b58866fd0f2c3c5","selected_for_release":false},{"run_id":"20260907T155543-ce3781c4","observed_at":"2026-09-07 15:55:43.033547+00:00","course_uid":"course_16ec62e27a725e15f6c766b5","course_id":"MS&E 333","catalog_version_id":"e58866f4b3972c306261950d7ba668f3ae073e28742d7ed9c688b3d38b1d1ee4","record_version_id":"06497211b10ace5a2498ab996fe05446877db0fddc56c667c445ae30078af66f","job_id":"enrich-5590a4969e0a630fe46a86e8","output_id":"02fd4052ac0214698b3c8d6a0576c51646d9f88f5e930983bebc1ca43babf68a","section":"search_profile","status":"valid","value_json":"{\"assumed_background\":[{\"evidence\":[{\"course_id\":\"MS&E 350\",\"field\":\"description\",\"quote\":\"The basic structures and resulting properties of solid materials, including phase equilibria, meta-stability, mechanical properties, failure, corrosion, and materials selection.\"},{\"course_id\":\"MS&E 351\",\"field\":\"description\",\"quote\":\"Introduction to: atomic, electronic, and defect structures in materials; diffusional, mechanical and electrical properties of materials; and the role of structure and defects in diffusional, mechanical, and electrical properties.\"},{\"course_id\":\"CBE 440\",\"field\":\"description\",\"quote\":\"Structure and properties of metallic and nonmetallic materials of construction; interrelations between chemical bonding, structure, and behavior of materials.\"}],\"text\":\"Foundational materials science covering structure, properties, and bonding of solids.\"}],\"search_phrases\":[\"materials microprocessing\",\"materials engineering practice\",\"microscopic level processing\",\"MS&E 333 prerequisites\"],\"skills_taught\":[{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"description\",\"quote\":\"Integration of materials science theory and materials engineering practice as applied to the processing of materials at the microscopic level.\"}],\"text\":\"Integration of materials science theory and engineering practice for microscopic processing.\"}],\"summary\":{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"title\",\"quote\":\"MICROPROCESSING OF MATERIALS\"},{\"course_id\":\"MS&E 333\",\"field\":\"description\",\"quote\":\"Integration of materials science theory and materials engineering practice as applied to the processing of materials at the microscopic level.\"}],\"text\":\"MS&E 333 teaches the integration of materials science theory and engineering practice for processing materials at the microscopic level.\"},\"topics\":[{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"description\",\"quote\":\"processing of materials at the microscopic level\"}],\"text\":\"Microscopic materials processing\"},{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"description\",\"quote\":\"materials science theory and materials engineering practice\"}],\"text\":\"Materials science theory and engineering practice\"}]}","candidate_json":null,"error":null,"model":"nvidia/Qwen3.6-35B-A3B-NVFP4","model_revision":"1355db6a052410cfd62085d94b58866fd0f2c3c5","selected_for_release":false},{"run_id":"20260907T155543-ce3781c4","observed_at":"2026-09-07 15:55:43.033547+00:00","course_uid":"course_16ec62e27a725e15f6c766b5","course_id":"MS&E 333","catalog_version_id":"e58866f4b3972c306261950d7ba668f3ae073e28742d7ed9c688b3d38b1d1ee4","record_version_id":"06497211b10ace5a2498ab996fe05446877db0fddc56c667c445ae30078af66f","job_id":"enrich-5590a4969e0a630fe46a86e8","output_id":"02fd4052ac0214698b3c8d6a0576c51646d9f88f5e930983bebc1ca43babf68a","section":"student_experience","status":"insufficient_evidence","value_json":"{\"status\":\"insufficient_evidence\",\"themes\":[]}","candidate_json":null,"error":null,"model":"nvidia/Qwen3.6-35B-A3B-NVFP4","model_revision":"1355db6a052410cfd62085d94b58866fd0f2c3c5","selected_for_release":false},{"run_id":"20261014T203208-0851c9a1","observed_at":"2026-10-14 17:50:09.728220+00:00","course_uid":"course_16ec62e27a725e15f6c766b5","course_id":"MS&E 333","catalog_version_id":"e94b21899b0605d18fecb758ad3d366b79ca573a832b4e0a87bf7769b1f8f20a","record_version_id":"a41a9074ce213ecb72198ec6f40b7c5e48a4a02a2d31e7a78482c7d76df7999a","job_id":"enrich-6556a505c10f448d98d02466","output_id":"7aeef69c1115514d85acff728f314d16aaa3dd3ae3b14b59648b1257580c483b","section":"requirements","status":"invalid","value_json":null,"candidate_json":"{\"nodes\":[{\"children\":[\"n1\",\"n2\",\"n3\"],\"condition\":null,\"course\":null,\"evidence\":\"M S & E 350,351, orCBE 440, or member of Engineering Guest Students\",\"id\":\"root\",\"kind\":\"any\"},{\"children\":[],\"condition\":null,\"course\":{\"course_number\":350,\"minimum_grade\":null,\"subjects\":[\"MS&E\"],\"timing\":\"prior\"},\"evidence\":\"M S & E 350\",\"id\":\"n1\",\"kind\":\"course\"},{\"children\":[],\"condition\":null,\"course\":{\"course_number\":351,\"minimum_grade\":null,\"subjects\":[\"MS&E\"],\"timing\":\"prior\"},\"evidence\":\"351\",\"id\":\"n2\",\"kind\":\"course\"},{\"children\":[],\"condition\":null,\"course\":{\"course_number\":440,\"minimum_grade\":null,\"subjects\":[\"CBE\"],\"timing\":\"prior\"},\"evidence\":\"CBE 440\",\"id\":\"n3\",\"kind\":\"course\"},{\"children\":[],\"condition\":\"member of Engineering Guest Students\",\"course\":null,\"evidence\":\"member of Engineering Guest Students\",\"id\":\"n4\",\"kind\":\"condition\"}],\"notes\":[\"Source text 'orCBE' lacks a space before CBE; interpreted as OR operator followed by course CBE 440.\",\"'member of Engineering Guest Students' treated as an alternative eligibility condition.\"],\"root\":\"root\",\"status\":\"needs_review\"}","error":"Unreachable nodes: n4; connect all conditions and exclusions to the root.","model":"Qwen/Qwen3.8-27B","model_revision":"1d4bf0f2ff6012fd82039f2fa52739d0dd7c60c0","selected_for_release":false},{"run_id":"20261014T203208-0851c9a1","observed_at":"2026-10-14 17:50:09.728220+00:00","course_uid":"course_16ec62e27a725e15f6c766b5","course_id":"MS&E 333","catalog_version_id":"e94b21899b0605d18fecb758ad3d366b79ca573a832b4e0a87bf7769b1f8f20a","record_version_id":"a41a9074ce213ecb72198ec6f40b7c5e48a4a02a2d31e7a78482c7d76df7999a","job_id":"enrich-6556a505c10f448d98d02466","output_id":"7aeef69c1115514d85acff728f314d16aaa3dd3ae3b14b59648b1257580c483b","section":"search_profile","status":"valid","value_json":"{\"activity_tags\":[],\"assumed_background\":[],\"search_phrases\":[\"materials processing at the microscopic level\",\"semiconductor device physics and design\",\"lithography techniques comparison\",\"process flow design for semiconductors\"],\"skills_taught\":[{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"official_learning_outcomes\",\"outcome_index\":0,\"quote\":\"Explain basic semiconductor physics, and apply these same physics to approximate device carrier densities, mobility, switching behavior, and other electronically related quantities\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Explain basic semiconductor physics and apply it to approximate device carrier densities, mobility, and switching behavior.\"},{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"official_learning_outcomes\",\"outcome_index\":1,\"quote\":\"Design process flows based on the physical processes required for desired outcomes in target semiconductor device structures\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Design process flows based on physical processes required for desired outcomes in target semiconductor device structures.\"},{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"official_learning_outcomes\",\"outcome_index\":2,\"quote\":\"Describe how lithography processes are executed and be able to weigh the benefits of each lithography technique against each other\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Describe how lithography processes are executed and weigh the benefits of different lithography techniques against each other.\"},{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"official_learning_outcomes\",\"outcome_index\":3,\"quote\":\"Analyze device characteristics and connect this analysis with designed process flows\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Analyze device characteristics and connect this analysis with designed process flows.\"}],\"summary\":{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"title\",\"quote\":\"MICROPROCESSING OF MATERIALS\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"},{\"course_id\":\"MS&E 333\",\"field\":\"description\",\"quote\":\"Integration of materials science theory and materials engineering practice as applied to the processing of materials at the microscopic level.\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Microprocessing of Materials integrates materials science theory and engineering practice to process materials at the microscopic level.\"},\"topics\":[{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"description\",\"quote\":\"Integration of materials science theory and materials engineering practice as applied to the processing of materials at the microscopic level.\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Materials science theory and engineering practice applied to microscopic material processing.\"},{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"official_learning_outcomes\",\"outcome_index\":0,\"quote\":\"Explain basic semiconductor physics, and apply these same physics to approximate device carrier densities, mobility, switching behavior, and other electronically related quantities\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Basic semiconductor physics including carrier densities, mobility, and switching behavior.\"},{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"official_learning_outcomes\",\"outcome_index\":2,\"quote\":\"Describe how lithography processes are executed and be able to weigh the benefits of each lithography technique against each other\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Execution of lithography processes and comparative benefits of different lithography techniques.\"}]}","candidate_json":null,"error":null,"model":"Qwen/Qwen3.8-27B","model_revision":"1d4bf0f2ff6012fd82039f2fa52739d0dd7c60c0","selected_for_release":false},{"run_id":"20261014T203208-0851c9a1","observed_at":"2026-10-14 17:50:09.728220+00:00","course_uid":"course_16ec62e27a725e15f6c766b5","course_id":"MS&E 333","catalog_version_id":"e94b21899b0605d18fecb758ad3d366b79ca573a832b4e0a87bf7769b1f8f20a","record_version_id":"a41a9074ce213ecb72198ec6f40b7c5e48a4a02a2d31e7a78482c7d76df7999a","job_id":"enrich-6556a505c10f448d98d02466","output_id":"7aeef69c1115514d85acff728f314d16aaa3dd3ae3b14b59648b1257580c483b","section":"student_experience","status":"insufficient_evidence","value_json":"{\"status\":\"insufficient_evidence\",\"themes\":[]}","candidate_json":null,"error":null,"model":"Qwen/Qwen3.8-27B","model_revision":"1d4bf0f2ff6012fd82039f2fa52739d0dd7c60c0","selected_for_release":false},{"run_id":"20261029T213040-0fa85c20","observed_at":"2026-10-29 21:30:40.248904+00:00","course_uid":"course_16ec62e27a725e15f6c766b5","course_id":"MS&E 333","catalog_version_id":"e94b21899b0605d18fecb758ad3d366b79ca573a832b4e0a87bf7769b1f8f20a","record_version_id":"d42ad80fafc486141ba77c38fa67262fce18752f266859bb925d1c68ae2ec9d3","job_id":"enrich-75500eb4bb3674767ebe899d","output_id":"6d3495e4b69f457c6725af910bae2684f75fb333146c3262d91e8d740c52b367","section":"requirements","status":"needs_review","value_json":"{\"nodes\":[{\"children\":[\"n1\",\"n2\",\"n3\",\"n4\"],\"condition\":null,\"course\":null,\"evidence\":\"M S & E 350,351, orCBE 440, or member of Engineering Guest Students\",\"id\":\"root\",\"kind\":\"any\"},{\"children\":[],\"condition\":null,\"course\":{\"course_number\":350,\"minimum_grade\":null,\"subjects\":[\"MS&E\"],\"timing\":\"unspecified\"},\"evidence\":\"M S & E 350\",\"id\":\"n1\",\"kind\":\"course\"},{\"children\":[],\"condition\":null,\"course\":{\"course_number\":351,\"minimum_grade\":null,\"subjects\":[\"MS&E\"],\"timing\":\"unspecified\"},\"evidence\":\"M S & E 350,351\",\"id\":\"n2\",\"kind\":\"course\"},{\"children\":[],\"condition\":null,\"course\":{\"course_number\":440,\"minimum_grade\":null,\"subjects\":[\"CBE\"],\"timing\":\"unspecified\"},\"evidence\":\"orCBE 440\",\"id\":\"n3\",\"kind\":\"course\"},{\"children\":[],\"condition\":\"member of Engineering Guest Students\",\"course\":null,\"evidence\":\"member of Engineering Guest Students\",\"id\":\"n4\",\"kind\":\"condition\"}],\"notes\":[\"Interpreted 'orCBE' as the OR operator followed by CBE 440.\",\"The guest-student clause is an alternative eligibility condition, not a course requirement.\"],\"root\":\"root\",\"status\":\"parsed\"}","candidate_json":null,"error":null,"model":"Qwen/Qwen3.8-27B","model_revision":"1d4bf0f2ff6012fd82039f2fa52739d0dd7c60c0","selected_for_release":true},{"run_id":"20261029T213040-0fa85c20","observed_at":"2026-10-29 21:30:40.248904+00:00","course_uid":"course_16ec62e27a725e15f6c766b5","course_id":"MS&E 333","catalog_version_id":"e94b21899b0605d18fecb758ad3d366b79ca573a832b4e0a87bf7769b1f8f20a","record_version_id":"d42ad80fafc486141ba77c38fa67262fce18752f266859bb925d1c68ae2ec9d3","job_id":"enrich-75500eb4bb3674767ebe899d","output_id":"6d3495e4b69f457c6725af910bae2684f75fb333146c3262d91e8d740c52b367","section":"search_profile","status":"valid","value_json":"{\"activity_tags\":[],\"assumed_background\":[],\"search_phrases\":[\"materials processing at the microscopic level\",\"semiconductor device physics and design\",\"lithography techniques comparison\",\"process flow design for semiconductors\"],\"skills_taught\":[{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"official_learning_outcomes\",\"outcome_index\":0,\"quote\":\"Explain basic semiconductor physics, and apply these same physics to approximate device carrier densities, mobility, switching behavior, and other electronically related quantities\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Explain basic semiconductor physics and apply it to approximate device carrier densities, mobility, and switching behavior.\"},{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"official_learning_outcomes\",\"outcome_index\":1,\"quote\":\"Design process flows based on the physical processes required for desired outcomes in target semiconductor device structures\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Design process flows based on physical processes required for desired outcomes in target semiconductor device structures.\"},{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"official_learning_outcomes\",\"outcome_index\":2,\"quote\":\"Describe how lithography processes are executed and be able to weigh the benefits of each lithography technique against each other\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Describe how lithography processes are executed and weigh the benefits of different lithography techniques against each other.\"},{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"official_learning_outcomes\",\"outcome_index\":3,\"quote\":\"Analyze device characteristics and connect this analysis with designed process flows\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Analyze device characteristics and connect this analysis with designed process flows.\"}],\"summary\":{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"title\",\"quote\":\"MICROPROCESSING OF MATERIALS\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"},{\"course_id\":\"MS&E 333\",\"field\":\"description\",\"quote\":\"Integration of materials science theory and materials engineering practice as applied to the processing of materials at the microscopic level.\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Microprocessing of Materials integrates materials science theory and engineering practice to process materials at the microscopic level.\"},\"topics\":[{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"description\",\"quote\":\"Integration of materials science theory and materials engineering practice as applied to the processing of materials at the microscopic level.\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Materials science theory and engineering practice applied to microscopic material processing.\"},{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"official_learning_outcomes\",\"outcome_index\":0,\"quote\":\"Explain basic semiconductor physics, and apply these same physics to approximate device carrier densities, mobility, switching behavior, and other electronically related quantities\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Basic semiconductor physics including carrier densities, mobility, and switching behavior.\"},{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"official_learning_outcomes\",\"outcome_index\":2,\"quote\":\"Describe how lithography processes are executed and be able to weigh the benefits of each lithography technique against each other\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Execution of lithography processes and comparative benefits of different lithography techniques.\"}]}","candidate_json":null,"error":null,"model":"Qwen/Qwen3.8-27B","model_revision":"1d4bf0f2ff6012fd82039f2fa52739d0dd7c60c0","selected_for_release":true},{"run_id":"20261029T213040-0fa85c20","observed_at":"2026-10-29 21:30:40.248904+00:00","course_uid":"course_16ec62e27a725e15f6c766b5","course_id":"MS&E 333","catalog_version_id":"e94b21899b0605d18fecb758ad3d366b79ca573a832b4e0a87bf7769b1f8f20a","record_version_id":"d42ad80fafc486141ba77c38fa67262fce18752f266859bb925d1c68ae2ec9d3","job_id":"enrich-75500eb4bb3674767ebe899d","output_id":"6d3495e4b69f457c6725af910bae2684f75fb333146c3262d91e8d740c52b367","section":"student_experience","status":"insufficient_evidence","value_json":"{\"status\":\"insufficient_evidence\",\"themes\":[]}","candidate_json":null,"error":null,"model":"Qwen/Qwen3.8-27B","model_revision":"1d4bf0f2ff6012fd82039f2fa52739d0dd7c60c0","selected_for_release":true},{"run_id":"20261029T213040-0fa85c20","observed_at":"2026-10-29 21:30:40.248904+00:00","course_uid":"course_16ec62e27a725e15f6c766b5","course_id":"MS&E 333","catalog_version_id":"e94b21899b0605d18fecb758ad3d366b79ca573a832b4e0a87bf7769b1f8f20a","record_version_id":"d42ad80fafc486141ba77c38fa67262fce18752f266859bb925d1c68ae2ec9d3","job_id":"enrich-75500eb4bb3674767ebe899d","output_id":"6d3495e4b69f457c6725af910bae2684f75fb333146c3262d91e8d740c52b367","section":"student_summary","status":"valid","value_json":"{\"context_hash\":\"657d265ddbf6af4d8bced4d570909abfda9da12977cd639a5ac87ad3efb7ab7f\",\"course_id\":\"MS&E 333\",\"current_instructors\":[{\"instructor_uid\":\"instructor_5f1c792a1a0cf2938fd8021b\",\"message\":\"No course-specific reviews available\",\"name\":\"Chang-Beom Eom\",\"review_status\":\"no_course_reviews\",\"rmp_instructor_id\":null,\"summary\":[{\"citations\":[{\"course_id\":\"MS&E 333\",\"run_id\":\"20261029T213040-0fa85c20\",\"section_number\":1,\"source_course_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"section_grades_latest\",\"term_id\":\"1174\",\"type\":\"grade\"},{\"course_id\":\"MS&E 333\",\"run_id\":\"20261029T213040-0fa85c20\",\"section_number\":1,\"source_course_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"section_grades_latest\",\"term_id\":\"1184\",\"type\":\"grade\"},{\"course_id\":\"MS&E 333\",\"run_id\":\"20261029T213040-0fa85c20\",\"section_number\":1,\"source_course_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"section_grades_latest\",\"term_id\":\"1194\",\"type\":\"grade\"}],\"text\":\"Recent recorded grades — Spring 2017: 3.76 GPA, 96.1% A/AB (n=51 letter grades); Spring 2018: 3.73 GPA, 91.1% A/AB (n=45 letter grades); Spring 2019: 3.69 GPA, 89.2% A/AB (n=65 letter grades).\"}]}],\"difficulty_workload\":[],\"errors\":[],\"historical_context\":[],\"message\":\"No course-specific reviews available\",\"offered\":true,\"profile_hash\":\"3f5110430805ccdd533c0c072df62d68a8a5f5441c4530bbdb15d419a199a09c\",\"quick_take\":[{\"citations\":[{\"course_id\":\"MS&E 333\",\"run_id\":\"20261029T213040-0fa85c20\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"grades_latest\",\"term_id\":\"1244\",\"type\":\"grade\"},{\"course_id\":\"MS&E 333\",\"run_id\":\"20261029T213040-0fa85c20\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"grades_latest\",\"term_id\":\"1254\",\"type\":\"grade\"},{\"course_id\":\"MS&E 333\",\"run_id\":\"20261029T213040-0fa85c20\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"grades_latest\",\"term_id\":\"1264\",\"type\":\"grade\"}],\"text\":\"Recent recorded grades — Spring 2024: 3.06 GPA, 41.7% A/AB (n=24 letter grades); Spring 2025: 3.18 GPA, 42.9% A/AB (n=28 letter grades); Spring 2026: 3.25 GPA, 50.0% A/AB (n=16 letter grades).\"}],\"student_experience\":[],\"task_hash\":\"9dea82ef7f2113a5605c1c6030c4f9b19967eb742cc93a78268fb92357d29f5c\",\"teaching_history\":[{\"citations\":[{\"course_id\":\"MS&E 333\",\"run_id\":\"20261029T213040-0fa85c20\",\"section_number\":1,\"source_course_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"section_grades_latest\",\"term_id\":\"1074\",\"type\":\"grade\"},{\"course_id\":\"MS&E 333\",\"run_id\":\"20261029T213040-0fa85c20\",\"section_number\":1,\"source_course_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"section_grades_latest\",\"term_id\":\"1084\",\"type\":\"grade\"},{\"course_id\":\"MS&E 333\",\"run_id\":\"20261029T213040-0fa85c20\",\"section_number\":1,\"source_course_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"section_grades_latest\",\"term_id\":\"1094\",\"type\":\"grade\"},{\"course_id\":\"MS&E 333\",\"run_id\":\"20261029T213040-0fa85c20\",\"section_number\":1,\"source_course_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"section_grades_latest\",\"term_id\":\"1104\",\"type\":\"grade\"},{\"course_id\":\"MS&E 333\",\"run_id\":\"20261029T213040-0fa85c20\",\"section_number\":1,\"source_course_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"section_grades_latest\",\"term_id\":\"1114\",\"type\":\"grade\"},{\"course_id\":\"MS&E 333\",\"run_id\":\"20261029T213040-0fa85c20\",\"section_number\":1,\"source_course_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"section_grades_latest\",\"term_id\":\"1124\",\"type\":\"grade\"},{\"course_id\":\"MS&E 333\",\"run_id\":\"20261029T213040-0fa85c20\",\"section_number\":1,\"source_course_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"section_grades_latest\",\"term_id\":\"1134\",\"type\":\"grade\"},{\"course_id\":\"MS&E 333\",\"run_id\":\"20261029T213040-0fa85c20\",\"section_number\":1,\"source_course_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"section_grades_latest\",\"term_id\":\"1154\",\"type\":\"grade\"},{\"course_id\":\"MS&E 333\",\"run_id\":\"20261029T213040-0fa85c20\",\"section_number\":1,\"source_course_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"section_grades_latest\",\"term_id\":\"1164\",\"type\":\"grade\"},{\"course_id\":\"MS&E 333\",\"run_id\":\"20261029T213040-0fa85c20\",\"section_number\":1,\"source_course_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"section_grades_latest\",\"term_id\":\"1174\",\"type\":\"grade\"},{\"course_id\":\"MS&E 333\",\"run_id\":\"20261029T213040-0fa85c20\",\"section_number\":1,\"source_course_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"section_grades_latest\",\"term_id\":\"1184\",\"type\":\"grade\"},{\"course_id\":\"MS&E 333\",\"run_id\":\"20261029T213040-0fa85c20\",\"section_number\":1,\"source_course_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"section_grades_latest\",\"term_id\":\"1194\",\"type\":\"grade\"}],\"text\":\"CHANG-BEOM EOM is recorded teaching in Spring 2007, Spring 2008, Spring 2009, Spring 2010, Spring 2011, Spring 2012, Spring 2013, Spring 2015, Spring 2016, Spring 2017, Spring 2018, Spring 2019. Recorded history may be incomplete and does not establish a future schedule.\"}],\"term_id\":\"1274\",\"term_name\":\"2027 Sprng\",\"version\":3}","candidate_json":null,"error":null,"model":"Qwen/Qwen3.8-27B","model_revision":"1d4bf0f2ff6012fd82039f2fa52739d0dd7c60c0","selected_for_release":true},{"run_id":"20261014T203208-0851c9a1","observed_at":"2026-10-14 17:50:09.728220+00:00","course_uid":"course_16ec62e27a725e15f6c766b5","course_id":"MS&E 333","catalog_version_id":"e94b21899b0605d18fecb758ad3d366b79ca573a832b4e0a87bf7769b1f8f20a","record_version_id":"a41a9074ce213ecb72198ec6f40b7c5e48a4a02a2d31e7a78482c7d76df7999a","job_id":"enrich-79348710a077dbb34341f483","output_id":"73f3e301233dc3dfd156721705d276c928a85dca712e5dee0efb896b84a95f95","section":"requirements","status":"needs_review","value_json":"{\"nodes\":[{\"children\":[\"n1\",\"n2\",\"n3\",\"n4\"],\"condition\":null,\"course\":null,\"evidence\":\"M S & E 350,351, orCBE 440, or member of Engineering Guest Students\",\"id\":\"root\",\"kind\":\"any\"},{\"children\":[],\"condition\":null,\"course\":{\"course_number\":350,\"minimum_grade\":null,\"subjects\":[\"MS&E\"],\"timing\":\"unspecified\"},\"evidence\":\"M S & E 350\",\"id\":\"n1\",\"kind\":\"course\"},{\"children\":[],\"condition\":null,\"course\":{\"course_number\":351,\"minimum_grade\":null,\"subjects\":[\"MS&E\"],\"timing\":\"unspecified\"},\"evidence\":\"M S & E 350,351\",\"id\":\"n2\",\"kind\":\"course\"},{\"children\":[],\"condition\":null,\"course\":{\"course_number\":440,\"minimum_grade\":null,\"subjects\":[\"CBE\"],\"timing\":\"unspecified\"},\"evidence\":\"orCBE 440\",\"id\":\"n3\",\"kind\":\"course\"},{\"children\":[],\"condition\":\"member of Engineering Guest Students\",\"course\":null,\"evidence\":\"member of Engineering Guest Students\",\"id\":\"n4\",\"kind\":\"condition\"}],\"notes\":[\"Interpreted 'orCBE' as the OR operator followed by CBE 440.\",\"The guest-student clause is an alternative eligibility condition, not a course requirement.\"],\"root\":\"root\",\"status\":\"parsed\"}","candidate_json":null,"error":null,"model":"Qwen/Qwen3.8-27B","model_revision":"1d4bf0f2ff6012fd82039f2fa52739d0dd7c60c0","selected_for_release":false},{"run_id":"20261014T203208-0851c9a1","observed_at":"2026-10-14 17:50:09.728220+00:00","course_uid":"course_16ec62e27a725e15f6c766b5","course_id":"MS&E 333","catalog_version_id":"e94b21899b0605d18fecb758ad3d366b79ca573a832b4e0a87bf7769b1f8f20a","record_version_id":"a41a9074ce213ecb72198ec6f40b7c5e48a4a02a2d31e7a78482c7d76df7999a","job_id":"enrich-79348710a077dbb34341f483","output_id":"73f3e301233dc3dfd156721705d276c928a85dca712e5dee0efb896b84a95f95","section":"search_profile","status":"valid","value_json":"{\"activity_tags\":[],\"assumed_background\":[],\"search_phrases\":[\"materials processing at the microscopic level\",\"semiconductor device physics and design\",\"lithography techniques comparison\",\"process flow design for semiconductors\"],\"skills_taught\":[{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"official_learning_outcomes\",\"outcome_index\":0,\"quote\":\"Explain basic semiconductor physics, and apply these same physics to approximate device carrier densities, mobility, switching behavior, and other electronically related quantities\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Explain basic semiconductor physics and apply it to approximate device carrier densities, mobility, and switching behavior.\"},{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"official_learning_outcomes\",\"outcome_index\":1,\"quote\":\"Design process flows based on the physical processes required for desired outcomes in target semiconductor device structures\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Design process flows based on physical processes required for desired outcomes in target semiconductor device structures.\"},{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"official_learning_outcomes\",\"outcome_index\":2,\"quote\":\"Describe how lithography processes are executed and be able to weigh the benefits of each lithography technique against each other\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Describe how lithography processes are executed and weigh the benefits of different lithography techniques against each other.\"},{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"official_learning_outcomes\",\"outcome_index\":3,\"quote\":\"Analyze device characteristics and connect this analysis with designed process flows\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Analyze device characteristics and connect this analysis with designed process flows.\"}],\"summary\":{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"title\",\"quote\":\"MICROPROCESSING OF MATERIALS\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"},{\"course_id\":\"MS&E 333\",\"field\":\"description\",\"quote\":\"Integration of materials science theory and materials engineering practice as applied to the processing of materials at the microscopic level.\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Microprocessing of Materials integrates materials science theory and engineering practice to process materials at the microscopic level.\"},\"topics\":[{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"description\",\"quote\":\"Integration of materials science theory and materials engineering practice as applied to the processing of materials at the microscopic level.\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Materials science theory and engineering practice applied to microscopic material processing.\"},{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"official_learning_outcomes\",\"outcome_index\":0,\"quote\":\"Explain basic semiconductor physics, and apply these same physics to approximate device carrier densities, mobility, switching behavior, and other electronically related quantities\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Basic semiconductor physics including carrier densities, mobility, and switching behavior.\"},{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"official_learning_outcomes\",\"outcome_index\":2,\"quote\":\"Describe how lithography processes are executed and be able to weigh the benefits of each lithography technique against each other\",\"source_url\":\"https://guide.wisc.edu/courses/m_s_e/\"}],\"text\":\"Execution of lithography processes and comparative benefits of different lithography techniques.\"}]}","candidate_json":null,"error":null,"model":"Qwen/Qwen3.8-27B","model_revision":"1d4bf0f2ff6012fd82039f2fa52739d0dd7c60c0","selected_for_release":false},{"run_id":"20261014T203208-0851c9a1","observed_at":"2026-10-14 17:50:09.728220+00:00","course_uid":"course_16ec62e27a725e15f6c766b5","course_id":"MS&E 333","catalog_version_id":"e94b21899b0605d18fecb758ad3d366b79ca573a832b4e0a87bf7769b1f8f20a","record_version_id":"a41a9074ce213ecb72198ec6f40b7c5e48a4a02a2d31e7a78482c7d76df7999a","job_id":"enrich-79348710a077dbb34341f483","output_id":"73f3e301233dc3dfd156721705d276c928a85dca712e5dee0efb896b84a95f95","section":"student_experience","status":"insufficient_evidence","value_json":"{\"status\":\"insufficient_evidence\",\"themes\":[]}","candidate_json":null,"error":null,"model":"Qwen/Qwen3.8-27B","model_revision":"1d4bf0f2ff6012fd82039f2fa52739d0dd7c60c0","selected_for_release":false},{"run_id":"20260907T155543-ce3781c4","observed_at":"2026-09-07 15:55:43.033547+00:00","course_uid":"course_16ec62e27a725e15f6c766b5","course_id":"MS&E 333","catalog_version_id":"e58866f4b3972c306261950d7ba668f3ae073e28742d7ed9c688b3d38b1d1ee4","record_version_id":"06497211b10ace5a2498ab996fe05446877db0fddc56c667c445ae30078af66f","job_id":"enrich-8b774950c2b6adfdc46d1b82","output_id":"471ff0a4d3bbb86da8332be7368c3ce0e7da548a53767e7a065dd4a4204065a6","section":"requirements","status":"valid","value_json":"{\"nodes\":[{\"children\":[\"n1\",\"n2\",\"n3\",\"n4\"],\"condition\":null,\"course\":null,\"evidence\":\"M S & E 350,351, orCBE 440, or member of Engineering Guest Students\",\"id\":\"n0\",\"kind\":\"any\"},{\"children\":[],\"condition\":null,\"course\":{\"course_number\":350,\"minimum_grade\":null,\"subjects\":[\"MS&E\"],\"timing\":\"prior\"},\"evidence\":\"M S & E 350\",\"id\":\"n1\",\"kind\":\"course\"},{\"children\":[],\"condition\":null,\"course\":{\"course_number\":351,\"minimum_grade\":null,\"subjects\":[\"MS&E\"],\"timing\":\"prior\"},\"evidence\":\"351\",\"id\":\"n2\",\"kind\":\"course\"},{\"children\":[],\"condition\":null,\"course\":{\"course_number\":440,\"minimum_grade\":null,\"subjects\":[\"CBE\"],\"timing\":\"prior\"},\"evidence\":\"CBE 440\",\"id\":\"n3\",\"kind\":\"course\"},{\"children\":[],\"condition\":\"member of Engineering Guest Students\",\"course\":null,\"evidence\":\"member of Engineering Guest Students\",\"id\":\"n4\",\"kind\":\"condition\"}],\"notes\":[],\"root\":\"n0\",\"status\":\"parsed\"}","candidate_json":null,"error":null,"model":"nvidia/Qwen3.6-35B-A3B-NVFP4","model_revision":"1355db6a052410cfd62085d94b58866fd0f2c3c5","selected_for_release":false},{"run_id":"20260907T155543-ce3781c4","observed_at":"2026-09-07 15:55:43.033547+00:00","course_uid":"course_16ec62e27a725e15f6c766b5","course_id":"MS&E 333","catalog_version_id":"e58866f4b3972c306261950d7ba668f3ae073e28742d7ed9c688b3d38b1d1ee4","record_version_id":"06497211b10ace5a2498ab996fe05446877db0fddc56c667c445ae30078af66f","job_id":"enrich-8b774950c2b6adfdc46d1b82","output_id":"471ff0a4d3bbb86da8332be7368c3ce0e7da548a53767e7a065dd4a4204065a6","section":"search_profile","status":"valid","value_json":"{\"assumed_background\":[{\"evidence\":[{\"course_id\":\"MS&E 350\",\"field\":\"description\",\"quote\":\"The basic structures and resulting properties of solid materials, including phase equilibria, meta-stability, mechanical properties, failure, corrosion, and materials selection.\"},{\"course_id\":\"MS&E 351\",\"field\":\"description\",\"quote\":\"Introduction to: atomic, electronic, and defect structures in materials; diffusional, mechanical and electrical properties of materials; and the role of structure and defects in diffusional, mechanical, and electrical properties.\"},{\"course_id\":\"CBE 440\",\"field\":\"description\",\"quote\":\"Structure and properties of metallic and nonmetallic materials of construction; interrelations between chemical bonding, structure, and behavior of materials.\"}],\"text\":\"Foundational materials science covering structure, properties, and bonding of solids.\"}],\"search_phrases\":[\"materials microprocessing\",\"materials engineering practice\",\"microscopic level processing\",\"MS&E 333 prerequisites\"],\"skills_taught\":[{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"description\",\"quote\":\"Integration of materials science theory and materials engineering practice as applied to the processing of materials at the microscopic level.\"}],\"text\":\"Integration of materials science theory and engineering practice for microscopic processing.\"}],\"summary\":{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"title\",\"quote\":\"MICROPROCESSING OF MATERIALS\"},{\"course_id\":\"MS&E 333\",\"field\":\"description\",\"quote\":\"Integration of materials science theory and materials engineering practice as applied to the processing of materials at the microscopic level.\"}],\"text\":\"MS&E 333 teaches the integration of materials science theory and engineering practice for processing materials at the microscopic level.\"},\"topics\":[{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"description\",\"quote\":\"processing of materials at the microscopic level\"}],\"text\":\"Microscopic materials processing\"},{\"evidence\":[{\"course_id\":\"MS&E 333\",\"field\":\"description\",\"quote\":\"materials science theory and materials engineering practice\"}],\"text\":\"Materials science theory and engineering practice\"}]}","candidate_json":null,"error":null,"model":"nvidia/Qwen3.6-35B-A3B-NVFP4","model_revision":"1355db6a052410cfd62085d94b58866fd0f2c3c5","selected_for_release":false},{"run_id":"20260907T155543-ce3781c4","observed_at":"2026-09-07 15:55:43.033547+00:00","course_uid":"course_16ec62e27a725e15f6c766b5","course_id":"MS&E 333","catalog_version_id":"e58866f4b3972c306261950d7ba668f3ae073e28742d7ed9c688b3d38b1d1ee4","record_version_id":"06497211b10ace5a2498ab996fe05446877db0fddc56c667c445ae30078af66f","job_id":"enrich-8b774950c2b6adfdc46d1b82","output_id":"471ff0a4d3bbb86da8332be7368c3ce0e7da548a53767e7a065dd4a4204065a6","section":"student_experience","status":"insufficient_evidence","value_json":"{\"status\":\"insufficient_evidence\",\"themes\":[]}","candidate_json":null,"error":null,"model":"nvidia/Qwen3.6-35B-A3B-NVFP4","model_revision":"1355db6a052410cfd62085d94b58866fd0f2c3c5","selected_for_release":false},{"run_id":"20260907T155543-ce3781c4","observed_at":"2026-09-07 15:55:43.033547+00:00","course_uid":"course_16ec62e27a725e15f6c766b5","course_id":"MS&E 333","catalog_version_id":"e58866f4b3972c306261950d7ba668f3ae073e28742d7ed9c688b3d38b1d1ee4","record_version_id":"06497211b10ace5a2498ab996fe05446877db0fddc56c667c445ae30078af66f","job_id":"enrich-8b774950c2b6adfdc46d1b82","output_id":"471ff0a4d3bbb86da8332be7368c3ce0e7da548a53767e7a065dd4a4204065a6","section":"student_summary","status":"valid","value_json":"{\"context_hash\":\"4757b18f330381f9abe0d5ea5f65ccc022aa65569475f007e3ee018b79a50281\",\"course_id\":\"MS&E 333\",\"current_instructors\":[],\"difficulty_workload\":[],\"errors\":[],\"historical_context\":[],\"message\":\"No course-specific reviews available\",\"offered\":false,\"profile_hash\":\"5cb4dabf887cdbcd8c00d5a1312e10828b95c63f30bc3ea76aea199565390d02\",\"quick_take\":[{\"citations\":[{\"course_id\":\"MS&E 333\",\"run_id\":\"20260907T155543-ce3781c4\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"grades_latest\",\"term_id\":\"1244\",\"type\":\"grade\"},{\"course_id\":\"MS&E 333\",\"run_id\":\"20260907T155543-ce3781c4\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"grades_latest\",\"term_id\":\"1254\",\"type\":\"grade\"},{\"course_id\":\"MS&E 333\",\"run_id\":\"20260907T155543-ce3781c4\",\"source_record\":{\"entity_id\":\"dadf965e-203e-3da7-b51f-b042895cdbc3\",\"file\":\"tables/observations.parquet\",\"kind\":\"grades\",\"source\":\"madgrades\"},\"table\":\"grades_latest\",\"term_id\":\"1264\",\"type\":\"grade\"}],\"text\":\"Recent recorded grades — Spring 2024: 3.06 GPA, 41.7% A/AB (n=24 letter grades); Spring 2025: 3.18 GPA, 42.9% A/AB (n=28 letter grades); Spring 2026: 3.25 GPA, 50.0% A/AB (n=16 letter grades).\"}],\"student_experience\":[],\"task_hash\":\"74fb0997943e888960bbc9e47db8c4fd12e4292d55c20509d8d89db6a9910f68\",\"teaching_history\":[],\"term_id\":\"1272\",\"term_name\":\"2026 Fall\",\"version\":2}","candidate_json":null,"error":null,"model":"nvidia/Qwen3.6-35B-A3B-NVFP4","model_revision":"1355db6a052410cfd62085d94b58866fd0f2c3c5","selected_for_release":false}]